parameter max. units v r d.c. reverse voltage 1200 v i f @ t c = 100c continuous forward current ? 15 i fsm @ t c = 25c single pulse forward current ? 130 p d @ t c = 25c maximum power dissipation 63 w t j operating junction and -55 to +150 c t stg storage temperature range ? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters ? hermetic ? surface mount features description hexfred tm diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode hexfred tm v r = 1200v v f = 4.46v q rr = 370nc di (rec)m /dt = 380a/s a absolute maximum ratings (per leg) note: ? d.c. = 50% rect. wave ? 1/2 sine wave, 60 hz , p.w. = 8.33 ms thermal - mechanical characteristics parameter typ. max. units r q jc junction-to-case, single leg conducting 2.0 weight 2.6 g c/w HFA40HF120C preliminary pd-91797 (isolated base) 8/20/98 www.irf.com 1 anode common anode cathode smd-1
HFA40HF120C 2 www.irf.com parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 1200 v i r = 250a v fm max forward voltage 3.3 i f = 7.0a 4.4 v i f = 15a see fig. 1 2.8 i f = 7.0a, t j = 125c i rm max reverse leakage current 10 a v r = v r rated 1.0 ma t j = 125c, v r = 480v c t junction capacitance 10 15 pf v r = 200v see fig. 3 l s series inductance 2.8 nh measured from center of bond pad to end of anode bonding wire electrical characteristics (per leg) @ t j = 25c (unless otherwise specified) dynamic recovery characteristics (per leg) @ t j = 25c (unless otherwise specified) a/s nc a see fig. 2 parameter min. typ. max. units test conditions t rr1 reverse recovery time 58 100 ns t j = 25c see fig. t rr2 110 165 t j = 125c 5 i f = 7a i rrm1 peak recovery current 5.4 8.1 t j = 25c see fig. i rrm2 7.2 10.8 t j = 125c 6 v r = 200v q rr1 reverse recovery charge 185 370 t j = 25c see fig. q rr2 395 590 t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current 255 380 t j = 25c see fig. di (rec)m /dt2 during t b 160 240 t j = 125c 8 case outline and dimensions smd-1 ir case style smd-1 dimensions in millimeters and (inches) lead assignments : 2 - common cathode 1, 3 - anode
HFA40HF120C www.irf.com 3 fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - maximum forward voltage drop vs. instantaneous forward current 1 10 100 1 10 100 1000 reverse volta g e - v ( v ) r t junction capacitance - c (pf) a t = 25c j 0.001 0.01 0.1 1 10 100 1000 0 300 600 900 1200 r r reverse voltage - v (v) reverse current - i (a) t = 125c j t = 25c j t = 150c j 1 10 100 1.0 3.0 5.0 7.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
HFA40HF120C 4 www.irf.com fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt fig. 6 - typical recovery current vs. di f /dt 0 30 60 90 120 150 100 1000 trr - (ns) f di /dt - ( a/ s ) i = 14a i = 7a i = 3.5a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - ( a/ s ) rrm i - (a) i = 14a i = 7a i = 3.5a f f f v = 200v t = 125c t = 25c r j j 10 100 1000 100 1000 f di /dt - ( a/ s ) rr q - (nc) i = 14a i = 7a i = 3.5a f f f v = 200v t = 125c t = 25c r j j 10 100 1000 10000 100 1000 f di /dt - ( a/ s ) di(rec)m/dt - (a/s) v = 200v t = 125c t = 25c r j j i = 7a f i = 14a f i = 3.5a f qrr- (nc)
HFA40HF120C www.irf.com 5 4. q rr - area under curve defined by t rr and i rrm t rr x i rrm q rr = 2 5. di (rec)m /dt - peak rate of change of current during t b portion of t rr fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. trr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 w g d s dif/dt adjust world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 8/98
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